Recently, China Electronics Technology 46 Institute successfully prepared China's first 6-inch gallium oxide single crystal, reaching the highest international level!

        Gallium oxide is a novel ultra wide band gap semiconductor material with excellent physical and chemical properties, which has broad application prospects in the fields of microelectronics and optoelectronics. However, due to its high melting point, high-temperature decomposition, and easy cracking characteristics, the preparation of large size gallium oxide single crystals is extremely difficult.

        According to "China Electronics Technology", the gallium oxide team of the 46 Institute of China Electronics Technology has successfully constructed a thermal field structure suitable for the growth of 6-inch gallium oxide single crystals based on the design of large-scale gallium oxide thermal fields, breaking through the 6-inch gallium oxide single crystal growth technology, which can be used for the development of 6-inch gallium oxide single crystal substrates, and will strongly support the practical process of gallium oxide materials and the development of related industries in China.

        The gallium oxide team at the 46th Institute of China Electronics Technology has focused on polycrystalline surfaces, large dimensions, high doping, and low defects. Starting from the thermal field design of large size gallium oxide, it has successfully constructed a thermal field structure suitable for the growth of 6-inch gallium oxide single crystals, breaking through the 6-inch gallium oxide single crystal growth technology, and has good crystallization performance, which can be used for the development of 6-inch gallium oxide single crystal substrates, It will strongly support the practical process of gallium oxide materials and the development of related industries in China.

        In recent years, CETC has made significant breakthroughs and landmark achievements in the field of ultra-wide band gap semiconductor materials such as gallium oxide, aluminum nitride, and diamond, based on national strategic needs, strongly supporting the development of ultra-wide band gap semiconductor materials in China.

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