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EEPROM可编程存储
EEPROM (Electrically Erasable Programmable read only memory)是指带电可擦可编程只读存储器。是一种掉电后数据不丢失的存储芯片。 EEPROM 可以在电脑上或专用设备上擦除已有信息，重新编程。一般用在即插即用。
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商品描述
EEPROM (Electrically Erasable Programmable read only memory)是指带电可擦可编程只读存储器。是一种掉电后数据不丢失的存储芯片。 EEPROM 可以在电脑上或专用设备上擦除已有信息，重新编程。一般用在即插即用。
规格书.PDF灰色的为不可下载文件，红色的为可下载文件。
| Part No. | Density (kb) | Serial Interface | Operation Condition | Endurance | Extra Features | ESD (HBM) | Data Retention | Package | |
| Two-Wire SeriaI EEPROM | |||||||||
| ARMTD24C01-R0 | 1 | IIC | 1.7 V to 5.5 V | 2M Cycles | SWP;UID;ID page /Lock ID page; | >3kv | 200 years | SOP8(150mil);SOT23-5;TSSOP8:UDFN8(2x3) | PDF DownLoad |
| ARMTD24C02-R1 | 2 | IIC | 1.7 V to 5.5 V | 2M Cycles | SWP;UID;ID page /Lock ID page; | >5kv | 200 years | SOP8(150mil);SOT23-5;TSSOP8:UDFN8(2x3) | PDF DownLoad |
| ARMTD24C04-R1 | 4 | IIC | 1.7 V to 5.5 V | 2M Cycles | SWP;UID;ID page /Lock ID page; | >4kv | 200 years | SOP8(150mil);SOT23-5;TSSOP8:UDFN8(2x3) | PDF DownLoad |
| ARMTD24C08-R1 | 8 | IIC | 1.7 V to 5.5 V | 2M Cycles | SWP;UID;ID page /Lock ID page; | >4kv | 200 years | SOP8(150mil);SOT23-5;TSSOP8:UDFN8(2x3) | PDF DownLoad |
| ARMTD24C16-R | 16 | IIC | 1.7 V to 5.5 V | 2M Cycles | SWP;UID;ID page /Lock ID page; | >4kv | 200 years | SOP8(150mil);SOT23-5;TSSOP8:UDFN8(2x3) | PDF DownLoad |
| ARMTD24C32-R | 32 | IIC | 1.7 V to 5.5 V | 2M Cycles | SWP;UID;ID page /Lock ID page; | >4kv | 200 years | SOP8(150mil);SOT23-5;TSSOP8:UDFN8(2x3) | PDF DownLoad |
| ARMTD24C64-R1 | 64 | IIC | 1.7 V to 5.5 V | 2M Cycles | SWP;UID;ID page /Lock ID page; | >6kv | 200 years | SOP8(150mil);SOT23-5;TSSOP8:UDFN8(2x3) | PDF DownLoad |
| ARMTD24C128-R1 | 128 | IIC | 1.7 V to 5.5 V | 2M Cycles | SWP;UID;ID page /Lock ID page; | >6kv | 200 years | SOP8(150mil);TSSOP8; UDFN8(2x3) | PDF DownLoad |
| ARMTD24C256-R1 | 256 | IIC | 1.7 V to 5.5 V | 2M Cycles | SWP;UID;ID page /Lock ID page; | >6kv | 200 years | SOP8(150mil);TSSOP8;UDFN8(2x3) | PDF DownLoad |
| ARMTD24C512-R | 512 | IIC | 1.7 V to 5.5 V | 2M Cycles | SWP;UID;ID page /Lock ID page; | >6kv | 200 years | SOP8(150mil):TSSOP8; UDFN8(2x3) | PDF DownLoad |
| ARMTD24C512-R1 | 512 | IIC | 1.7 V to 5.5 V | 4M Cycles | SWP;UID;ID page /Lock ID page; | >6kv | 200 years | SOP8(150mil):TSSOP8; UDFN8(2x3) | PDF DownLoad |
| ARMTD24CM01-R | 1024 | IIC | 1.7 V to 5.5 V | 2M Cycles | SWP;UID;ID page /Lock ID page; | >6kv | 200 years | SOP8(150mil) ;TSSOP8; UDFN8(2x3) | PDF DownLoad |
| ARMTD24CM02-R | 2048 | IIC | 1.7 V to 5.5 V | 2M Cycles | SWP;UID;ID page /Lock ID page; | >6kv | 200 years | SOP8(150mil) | PDF DownLoad |
| WLCSP Two-Wire SeriaI EEPROM | |||||||||
| ARM24C64-C1 | 64 | IIC | 1.7 V to 5.5 V | 2M Cycles | SWP ; DAC;UID;ID page /Lock ID page | >6kv | 200 years | WLCSP 4 Ball | PDF DownLoad |
| ARM24C128-C1 | 128 | IIC | 1.7 V to 5.5 V | 2M Cycles | SWP ; DAC;UID;ID page /Lock ID page | >6kv | 200 years | WLCSP 4 Ball | PDF DownLoad |
| ARM24C256-C1 | 256 | IIC | 1.7 V to 5.5 V | 2M Cycles | SWP ; DAC;UID;ID page /Lock ID page | >6kv | 200 years | WLCSP 4 Ball | PDF DownLoad |
| Application Specific EEPROM | |||||||||
| ARMTD34C04 | 4 | IC/SMBuS | 1.7 V to 3.6 V | 2M Cycles | SWP;Timeout | >4kv | 200 years | TSSOP8 ;UDFN8(2x3) | PDF DownLoad |
| ARMTD34TS04 | 4+TS | IC/SMBuS | 1.7 V to 3.6 V | 2M Cycles | SWP;Timeout | >6kv | 200 years | TSSOP8 ;UDFN8(2x3) | PDF DownLoad |
