On July 23rd, Zhejiang Jingyue Semiconductor Co., Ltd. announced that it has successfully developed high-quality 12 inch SiC ingots, marking Jingyue's successful entry into the 12 inch SiC substrate lineup.

In the first half of 2025, Jingyue Semiconductor has successfully mass-produced 8-inch silicon carbide substrates. It will continue to invest and increase research and development efforts, and continuously adjust and optimize processes in thermal field design, seed crystal bonding, thickness improvement, and defect control, successfully conquering 12 inch substrates.

According to public information, Jingyue Semiconductor was founded in 2020 and is headquartered in Shengzhou City, Zhejiang Province. It focuses on the research and development, production, and sales of 8-12 inch conductive silicon carbide substrates and their epitaxial materials. Its products are widely used in new energy vehicles, charging piles, high-speed railways, communication base stations, and other fields. In 2021, Jingyue Semiconductor completed its Series A financing, followed by another round of financing in 2022.

In the future, Jingyue will continue to invest in research and development, focus on polishing products, improve yield and optimize parameters, and strive to become a leading domestic provider of silicon carbide materials.

On the same day, Shanxi Tiancheng Semiconductor Materials Co., Ltd. also announced the successful development of 12 inch (300mm) N-type silicon carbide single crystal material.

It is reported that Tiancheng Semiconductor has always focused on the research and production of silicon carbide materials, and has successively overcome the growth processes of large-size expansion and low defect N-type single crystal materials. The successful research and development of 12 inch N-type silicon carbide single crystal materials is an important milestone in the history of Tiancheng Semiconductor's development, and also the starting point for us to embark on a new journey.

Next, Tiancheng Semiconductor will spare no effort to promote the industrialization technology of large-sized silicon carbide single crystal materials, deepen research and development investment, and maintain a leading position in technology.

Tiancheng Semiconductor was founded in 2021 and is a high-tech enterprise specializing in the research and development, production, and crystal growth equipment manufacturing of third-generation semiconductor silicon carbide (SiC) substrate materials. In 2022, the small batch production of 6-inch conductive and semi insulating silicon carbide ingots was achieved. In 2024, the company achieved a breakthrough in the research and development of 8-inch SiC single crystal technology. In 2025, its independently developed 12 inch silicon carbide long crystal furnace has entered the stage of furnace assembly and process debugging, and is planned to be launched on the market in the third quarter of 2025.

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