Recently, Zhejiang Jingneng Microelectronics Co., Ltd. announced that its independently designed and developed first vehicle grade IGBT product has been successfully taped. All parameters of the new chip meet the design requirements. This breakthrough marks a "core" milestone for Jingneng in IGBT technology, laying the foundation for the development of more power chips in the future.

       This IGBT chip adopts the seventh generation micro groove gate and field cutoff technology. Through optimizing the surface structure and FS structure, it has both short circuit resistance and lower conduction/switching losses. The power density increases by about 35%, and its comprehensive performance indicators reach the industry leading level. Jingneng is deeply bound to wafer foundries and continuously improves chip performance through process co creation.

        Pan Yunbin, CEO of Jingneng Microelectronics, said, "A typical new energy vehicle uses more than 1200 chips. The proportion of power semiconductors is close to 1/4. The successful flow of IGBT products this time is the starting point of Jingneng's continuous exploration on the path of chip localization. The company will continue to improve and strengthen research and development, and continue to develop chip and module products with superior performance based on the development needs of powertrain systems."