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Trench MOSFET

Trench MOSFET

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        Trench MOSFETs are now more commonly used metal oxide semiconductor field effect transistors. Due to its low on resistance and low gate drain charge density, it has low power loss and fast switching speed.
Planar MOSFET

Planar MOSFET

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        Field Effect Transistor (FET) is abbreviated as a field effect transistor. Conducted by a majority of carriers, it is also known as a unipolar transistor. It belongs to a voltage controlled semiconductor device. With advantages such as high input resistance (107~1015 Ω), low noise, low power consumption, large dynamic range, easy integration, no secondary breakdown phenomenon, and wide safe working area, it has become a strong competitor for bipolar transistors and power transistors.
SGT MOSFET

SGT MOSFET

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        Shielded gate field effect transistors (SGTs) are more conducive to the flexible application of semiconductor integrated circuits due to their low gate drain capacitance cgd, low on-resistance, and high voltage withstand performance. Specifically, in a shielded gate field effect transistor, by setting a shielding electrode below the gate electrode, the gate drain capacitance can be significantly reduced, and the drift region of the shielded gate field effect transistor also has a high impurity carrier concentration, which can provide additional benefits for the breakdown voltage of the device, and can correspondingly reduce the conduction resistance.
SJ MOSFET

SJ MOSFET

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        Superjunction FET (SJFET) is a superconducting material with a special structure. At room temperature, it has the same electrical conductivity as ordinary metals, but its resistivity is much smaller than ordinary metals; And when the temperature increases, its resistivity decreases instead. This special structure enables it to work in high-temperature environments like ordinary semiconductors. The field effect tube made of this material is called a super junction field effect tube.

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