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EEPROM (Electrically Erasable Programmable Read Only Memory) refers to electrically erasable programmable read only memory. It is a storage chip that does not lose data after power failure. EEPROM can erase existing information and reprogram on a computer or dedicated device. Generally used for plug and play.
EEPROM (Electrically Erasable Programmable Read Only Memory) refers to electrically erasable programmable read only memory. It is a storage chip that does not lose data after power failure. EEPROM can erase existing information and reprogram on a computer or dedicated device. Generally used for plug and play.
Specifications. PDF The gray ones are non downloadable files, and the red ones are downloadable files.
Part No. | Density (kb) | Serial Interface | Operation Condition | Endurance | Extra Features | ESD (HBM) | Data Retention | Package | |
Two-Wire SeriaI EEPROM | |||||||||
ARMTD24C01-R0 | 1 | IIC | 1.7 V to 5.5 V | 2M Cycles | SWP;UID;ID page /Lock ID page; | >3kv | 200 years | SOP8(150mil);SOT23-5;TSSOP8:UDFN8(2x3) | PDF DownLoad |
ARMTD24C02-R1 | 2 | IIC | 1.7 V to 5.5 V | 2M Cycles | SWP;UID;ID page /Lock ID page; | >5kv | 200 years | SOP8(150mil);SOT23-5;TSSOP8:UDFN8(2x3) | PDF DownLoad |
ARMTD24C04-R1 | 4 | IIC | 1.7 V to 5.5 V | 2M Cycles | SWP;UID;ID page /Lock ID page; | >4kv | 200 years | SOP8(150mil);SOT23-5;TSSOP8:UDFN8(2x3) | PDF DownLoad |
ARMTD24C08-R1 | 8 | IIC | 1.7 V to 5.5 V | 2M Cycles | SWP;UID;ID page /Lock ID page; | >4kv | 200 years | SOP8(150mil);SOT23-5;TSSOP8:UDFN8(2x3) | PDF DownLoad |
ARMTD24C16-R | 16 | IIC | 1.7 V to 5.5 V | 2M Cycles | SWP;UID;ID page /Lock ID page; | >4kv | 200 years | SOP8(150mil);SOT23-5;TSSOP8:UDFN8(2x3) | PDF DownLoad |
ARMTD24C32-R | 32 | IIC | 1.7 V to 5.5 V | 2M Cycles | SWP;UID;ID page /Lock ID page; | >4kv | 200 years | SOP8(150mil);SOT23-5;TSSOP8:UDFN8(2x3) | PDF DownLoad |
ARMTD24C64-R1 | 64 | IIC | 1.7 V to 5.5 V | 2M Cycles | SWP;UID;ID page /Lock ID page; | >6kv | 200 years | SOP8(150mil);SOT23-5;TSSOP8:UDFN8(2x3) | PDF DownLoad |
ARMTD24C128-R1 | 128 | IIC | 1.7 V to 5.5 V | 2M Cycles | SWP;UID;ID page /Lock ID page; | >6kv | 200 years | SOP8(150mil);TSSOP8; UDFN8(2x3) | PDF DownLoad |
ARMTD24C256-R1 | 256 | IIC | 1.7 V to 5.5 V | 2M Cycles | SWP;UID;ID page /Lock ID page; | >6kv | 200 years | SOP8(150mil);TSSOP8;UDFN8(2x3) | PDF DownLoad |
ARMTD24C512-R | 512 | IIC | 1.7 V to 5.5 V | 2M Cycles | SWP;UID;ID page /Lock ID page; | >6kv | 200 years | SOP8(150mil):TSSOP8; UDFN8(2x3) | PDF DownLoad |
ARMTD24C512-R1 | 512 | IIC | 1.7 V to 5.5 V | 4M Cycles | SWP;UID;ID page /Lock ID page; | >6kv | 200 years | SOP8(150mil):TSSOP8; UDFN8(2x3) | PDF DownLoad |
ARMTD24CM01-R | 1024 | IIC | 1.7 V to 5.5 V | 2M Cycles | SWP;UID;ID page /Lock ID page; | >6kv | 200 years | SOP8(150mil) ;TSSOP8; UDFN8(2x3) | PDF DownLoad |
ARMTD24CM02-R | 2048 | IIC | 1.7 V to 5.5 V | 2M Cycles | SWP;UID;ID page /Lock ID page; | >6kv | 200 years | SOP8(150mil) | PDF DownLoad |
WLCSP Two-Wire SeriaI EEPROM | |||||||||
ARM24C64-C1 | 64 | IIC | 1.7 V to 5.5 V | 2M Cycles | SWP ; DAC;UID;ID page /Lock ID page | >6kv | 200 years | WLCSP 4 Ball | PDF DownLoad |
ARM24C128-C1 | 128 | IIC | 1.7 V to 5.5 V | 2M Cycles | SWP ; DAC;UID;ID page /Lock ID page | >6kv | 200 years | WLCSP 4 Ball | PDF DownLoad |
ARM24C256-C1 | 256 | IIC | 1.7 V to 5.5 V | 2M Cycles | SWP ; DAC;UID;ID page /Lock ID page | >6kv | 200 years | WLCSP 4 Ball | PDF DownLoad |
Application Specific EEPROM | |||||||||
ARMTD34C04 | 4 | IC/SMBuS | 1.7 V to 3.6 V | 2M Cycles | SWP;Timeout | >4kv | 200 years | TSSOP8 ;UDFN8(2x3) | PDF DownLoad |
ARMTD34TS04 | 4+TS | IC/SMBuS | 1.7 V to 3.6 V | 2M Cycles | SWP;Timeout | >6kv | 200 years | TSSOP8 ;UDFN8(2x3) | PDF DownLoad |
TVS/ESD Diode Transistor MOS FET LDO Hall IC BLCD controller